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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12581935 B1

PDFFull Text
Date of Patent:
Mar. 17, 2026

Filed:

Feb. 23, 2023

Stacked via structures and methods for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yen-Kun Lai, New Taipei City, TW;

Wei-Hsiang Tu, Hsinchu City, TW;

Ching-Ho Cheng, Hsinchu City, TW;

Cheng-Nan Lin, Hsinchu City, TW;

Chiang-Jui Chu, Yilan County, TW;

Chien Hao Hsu, Hsinchu County, TW;

Kuo-Chin Chang, Chiayi City, TW;

Mirng-Ji Lii, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/49816 (2013.01); H01L 23/528 (2013.01); H01L 25/0657 (2013.01); H01L 2225/06544 (2013.01);
Abstract

Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Find Patent Forward Citations

Lai, Yen-Kun. (2026). Stacked via structures and methods for forming the same (U.S. Patent No. 12581935). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581935

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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