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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12578640 B1

PDFFull Text
Date of Patent:
Mar. 17, 2026

Filed:

Mar. 15, 2022

Photosensitive material for photoresist and lithography

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Che Hsieh, Taipei, TW;

Yu-Chung Su, Hsinchu, TW;

Chia-Ching Chu, Hsinchu County, TW;

Tzu-Yi Wang, Hsinchu, TW;

Ta-Cheng Lien, Cyonglin Township, TW;

Hsin-Chang Lee, Zhubei, TW;

Ching-Yu Chang, Yuansun, TW;

Yahru Cheng, Taipei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Lippes Mathias LLP

Primary Examiner:

Mark F Huff

Assistant Examiner:

Kevin J Drummey

Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/004 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/0045 (2013.01); G03F 7/322 (2013.01); G03F 7/40 (2013.01);
Abstract

Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.

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Quick Actions:

Hsieh, Wei-Che. (2026). Photosensitive material for photoresist and lithography (U.S. Patent No. 12578640). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12578640

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