The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2026
Filed:
Aug. 29, 2022
Applied Materials, Inc., Santa Clara, CA (US);
Suketu Arun Parikh, San Jose, CA (US);
Ashish Pal, San Ramon, CA (US);
El Mehdi Bazizi, San Jose, CA (US);
Andrew Yeoh, Portland, OR (US);
Nitin K. Ingle, San Jose, CA (US);
Arvind Sundarrajan, Singapore, SG;
Guan Huei See, Singapore, SG;
Martinus Maria Berkens, Eindhoven, NL;
Sameer A. Deshpande, Santa Clara, CA (US);
Balasubramanian Pranatharthiharan, San Jose, CA (US);
Yen-Chu Yang, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming a semiconductor device is provided. The method includes forming an etch stop layer on a substrate having a first thickness, forming an epitaxial layer on the etch stop layer, and forming a wafer device on the epitaxial layer. The wafer device is bonded to a bonding wafer using hybrid bonding. The substrate is then ground to a second thickness less than the first thickness and planarized to a third thickness less than the second thickness. A mask layer is deposited on a bottom surface of the etch stop layer, and at least one via opening is formed in the mask layer. The etch stop layer is selectively removed, and the mask layer is removed to expose the substrate at the third thickness.