The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Mar. 13, 2020
Nippon Micrometal Corporation, Saitama, JP;
Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;
Takashi Yamada, Saitama, JP;
Akihito Nishibayashi, Saitama, JP;
Teruo Haibara, Saitama, JP;
Daizo Oda, Saitama, JP;
Motoki Eto, Saitama, JP;
Tetsuya Oyamada, Tokyo, JP;
Takayuki Kobayashi, Tokyo, JP;
Tomohiro Uno, Tokyo, JP;
NIPPON MICROMETAL CORPORATION, Saitama, JP;
NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., Tokyo, JP;
Abstract
There is provided an Al bonding wire which can achieve a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The Al bonding wire contains 0.01 to 1% of Sc, and further contains 0.01 to 0.1% in total of at least one or more of Y, La, Ce, Pr and Nd. With regard to the Al bonding wire, a recrystallization temperature thereof is increased, so that the proceeding of recrystallization of the bonding wire can be suppressed, and strength of the wire can be prevented from being decreased even when the semiconductor device is continuously used under a high temperature environment. Accordingly, the Al bonding wire can sufficiently secure the reliability of the bonded parts after a high-temperature long-term hysteresis.