The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2026

Filed:

Mar. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yen-Kun Lai, New Taipei, TW;

Yi-Wen Wu, Xizhi, TW;

Kuo-Chin Chang, Chiayi, TW;

PO-Hao Tsai, Zhongli, TW;

Mirng-Ji Lii, Sinpu Township, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0311 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/13026 (2013.01);
Abstract

Semiconductor devices and methods of manufacturing are provided, wherein a first passivation layer is deposited over a top redistribution structure; a second passivation layer is deposited over the first passivation layer; and a first opening is formed through the second passivation layer. After the forming the first opening, the first opening is reshaped into a second opening; a third opening is formed through the first passivation layer; and filling the second opening and the third opening with a conductive material.


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