The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2025

Filed:

Oct. 06, 2022
Applicant:

Nepes Co., Ltd.;

Inventors:

Yong Tae Kwon, Eumseong, KR;

Hyo Young Kim, Eumseong, KR;

Eun Yeong Son, Eumseong, KR;

Seung Ho Lee, Eumseong, KR;

Kyeung Hwan Kim, Eumseong, KR;

Jong Hyun Park, Eumseong, KR;

Assignee:

NEPES CO., LTD., Eumseong-gun, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49866 (2013.01); H01L 24/08 (2013.01); H10B 80/00 (2023.02); H01L 2224/08235 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1432 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1511 (2013.01); H01L 2924/15184 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Provided is a semiconductor package including a redistribution structure including at least one redistribution insulating layer and at least one redistribution pattern, at least one semiconductor chip located on the redistribution structure, and a molding layer located on the redistribution structure and covering the at least one semiconductor chip. The redistribution pattern includes a redistribution via passing through the redistribution insulating layer and extending in a first direction perpendicular to a top surface of the redistribution structure, and a redistribution line extending in a second direction parallel to the top surface of the redistribution structure. Inner side walls of the redistribution via have a certain inclination, and a difference between a thickness of a central portion of the redistribution line and a thickness of an edge of the redistribution line ranges from 1% to 10% of the thickness of the central portion of the redistribution line.


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