The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jul. 26, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tien-Chung Yang, Hsinchu, TW;

Li-Hsien Huang, Zhubei, TW;

Ming-Feng Wu, Miaoli County, TW;

Yung-Sheng Liu, Hsinchu, TW;

Chun-Jen Chen, Jhubei, TW;

Jun He, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/561 (2013.01); H01L 21/78 (2013.01); H01L 22/12 (2013.01); H01L 23/3128 (2013.01); H01L 23/49811 (2013.01); H01L 24/97 (2013.01); H01L 25/105 (2013.01);
Abstract

A laser grooving operation is performed to form a plurality of grooves in a semiconductor die prior to attaching the semiconductor die to a semiconductor device package substrate. In addition to forming a first groove through which blade sawing is to be performed to separate the semiconductor die from other semiconductor dies, a second groove may be formed between the first groove and a seal ring of the semiconductor die. The second groove is configured to contain any potential delamination that might otherwise propagate to an active region of the semiconductor die. Accordingly, the second groove and the associated laser grooving operation described herein may reduce the likelihood of delamination that might otherwise be caused by swelling and/or expansion in a molding compound formed around the semiconductor die after the semiconductor die is attached to the semiconductor device package substrate.


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