The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Apr. 15, 2022
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Renzo Capelli, Heidenheim, DE;

Markus Koch, Neu-Ulm, DE;

Dirk Hellweg, Langenau, DE;

Walter Pauls, Huettlingen, DE;

Grizelda Kersteen, Ulm, DE;

Klaus Gwosch, Aalen, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/84 (2012.01); G01N 21/33 (2006.01); G01N 21/55 (2014.01); G01N 21/956 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 1/84 (2013.01); G01N 21/33 (2013.01); G01N 21/55 (2013.01); G03F 7/70608 (2013.01); G03F 7/70616 (2013.01); G01N 2021/95676 (2013.01);
Abstract

When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 μm×50 μm. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.


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