The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2025

Filed:

Apr. 15, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hui-Min Huang, Taoyuan, TW;

Ming-Da Cheng, Taoyuan, TW;

Wei-Hung Lin, Xinfeng Township, Hsinchu County, TW;

Chang-Jung Hsueh, Taipei, TW;

Kai-Jun Zhan, Taoyuan, TW;

Yung-Sheng Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/14 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/0221 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13018 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/16227 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first conductive structure over the semiconductor substrate. The first conductive structure has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive structure. The semiconductor device structure also includes a second conductive structure over the semiconductor substrate. The second conductive structure is substantially as wide as the first conductive structure, and the second conductive structure has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive structure. The first conductive structure is closer to a center point of the semiconductor substrate than the second conductive structure. The second protruding portion is wider than the first protruding portion, and bottoms of the first protruding portion and the second protruding portion are substantially level with each other.


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