The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

May. 31, 2022
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yu-Sheng Lin, Zhubei, TW;

Chien-Tung Yu, Hsinchu, TW;

Chia-Hsiang Lin, Zhubei, TW;

Chin-Hua Wang, New Taipei, TW;

Shin-Puu Jeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/3135 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/18161 (2013.01); H01L 2924/351 (2013.01);
Abstract

In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.


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