The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 05, 2025

Filed:

Sep. 02, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

I-Hsieh Wong, Hsinchu, TW;

Alex Lee, Hsinchu, TW;

Wei-Han Fan, Hsin-Chu, TW;

Tzu-Hua Chiu, Hsinchu, TW;

Wei-Yang Lee, Taipei, TW;

Chia-Pin Lin, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 64/66 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/764 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 64/679 (2025.01); H01L 21/02211 (2013.01); H01L 21/0259 (2013.01); H01L 21/28123 (2013.01); H01L 21/764 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6739 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/018 (2025.01);
Abstract

A semiconductor device includes a base portion on a semiconductor substrate, a channel layer vertically above the base portion and extending parallel to a top surface of the semiconductor substrate, a gate portion between the channel layer and the base portion, a source/drain feature connected to the channel layer, an inner spacer between the source/drain feature and the gate portion, and an air gap between the source/drain feature and the semiconductor substrate. Moreover, a bottom surface of the source/drain feature is exposed in the air gap.


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