The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2025
Filed:
Mar. 03, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Jung-Hung Chang, Changhua County, TW;
Zhi-Chang Lin, Zhubei, TW;
Shih-Cheng Chen, New Taipei, TW;
Chien-Ning Yao, Hsinchu, TW;
Tsung-Han Chuang, Tainan, TW;
Kai-Lin Chuang, Chia-Yi, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Chih-Hao Wang, Baoshan Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure also includes a first bottom layer formed adjacent to the first nanostructures, and a first dielectric liner layer formed over the first bottom layer and adjacent to the first nanostructures. The semiconductor device structure further includes a first source/drain (S/D) structure formed over the first dielectric liner layer, and the first S/D structure is isolated from the first bottom layer by the first dielectric liner layer.