The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
An-Jhih Su, Taoyuan, TW;
Wei-Yu Chen, New Taipei, TW;
Ying-Ju Chen, Tuku Township, TW;
Tsung-Shu Lin, New Taipei, TW;
Chin-Chuan Chang, Zhudong Township, TW;
Hsien-Wei Chen, Hsinchu, TW;
Wei-Cheng Wu, Hsinchu, TW;
Li-Hsien Huang, Zhubei, TW;
Chi-Hsi Wu, Hsinchu, TW;
Der-Chyang Yeh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.