The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Sep. 29, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Kedi Wu, Fremont, CA (US);
Chenfei Shen, San Jose, CA (US);
Chi-Chou Lin, San Jose, CA (US);
Ilanit Fisher, San Jose, CA (US);
Shih Chung Chen, Cupertino, CA (US);
Mandyam Sriram, San Jose, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/06 (2006.01); C23C 16/34 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45529 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01); C23C 16/45553 (2013.01);
Abstract
Methods of forming electronic devices comprising tungsten film stacks are provided. Methods include forming a tungsten nucleation layer on the barrier layer using an atomic layer deposition (ALD) process including a tungsten precursor that is free of fluorine. Forming the nucleation layer comprises controlling process parameters and/or forming WSi pre-nucleation layer.