The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Feb. 07, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Po-Yu Lin, New Taipei, TW;

Wei-Yang Lee, Taipei, TW;

Chia-Pin Lin, Hsinchu County, TW;

Tzu-Hua Chiu, Hsinchu, TW;

Kuan-Hao Cheng, Hsinchu, TW;

Wei-Han Fan, Hsin-Chu, TW;

Li-Li Su, HsinChu County, TW;

Wei-Min Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H10D 30/031 (2025.01); H10D 30/6757 (2025.01); H10D 64/018 (2025.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/30604 (2013.01); H10D 30/6735 (2025.01); H10D 62/118 (2025.01);
Abstract

A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers over the semiconductor substrate and connected to the source/drain feature, a gate portion between vertically adjacent channel layers, and an inner spacer between the source/drain feature and the gate portion and between adjacent channel layers. The semiconductor device further includes an air gap between the inner spacer and the source/drain feature.


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