The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Sep. 12, 2022
Applicants:

Nippon Micrometal Corporation, Saitama, JP;

Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;

Inventors:

Daizo Oda, Saitama, JP;

Takashi Yamada, Saitama, JP;

Motoki Eto, Saitama, JP;

Teruo Haibara, Saitama, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 9/04 (2006.01); B23K 35/02 (2006.01); B23K 35/30 (2006.01); C22C 9/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/45 (2013.01); B23K 35/0227 (2013.01); B23K 35/302 (2013.01); C22C 9/04 (2013.01); C22C 9/06 (2013.01); H01L 2224/45105 (2013.01); H01L 2224/45109 (2013.01); H01L 2224/45118 (2013.01); H01L 2224/45123 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45155 (2013.01); H01L 2224/45164 (2013.01); H01L 2224/45166 (2013.01); H01L 2224/45169 (2013.01); H01L 2224/45173 (2013.01); H01L 2224/45178 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/0102 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01031 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01034 (2013.01); H01L 2924/01045 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01052 (2013.01); H01L 2924/01057 (2013.01); H01L 2924/01077 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01);
Abstract

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.


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