The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 13, 2025

Filed:

Dec. 21, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shu-Shen Yeh, Taoyuan, TW;

Chin-Hua Wang, New Taipei, TW;

Kuang-Chun Lee, New Taipei, TW;

Po-Yao Lin, Zhudong Township, TW;

Shyue-Ter Leu, Hsinchu, TW;

Shin-Puu Jeng, Po-Shan Village, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/04 (2006.01); H01L 23/10 (2006.01); H01L 23/367 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/04 (2013.01); H01L 23/10 (2013.01); H01L 23/367 (2013.01); H01L 23/3675 (2013.01); H01L 23/49816 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/16152 (2013.01);
Abstract

A chip package includes a substrate, a semiconductor chip, and a thermal conductive structure. The chip package includes a first and a second support structures below the thermal conductive structure. The first and the second support structures connect the substrate and corners of the thermal conductive structure. The thermal conductive structure has a side edge connecting the first and the second support structures. The first and the second support structures and the side edge together define of an opening exposing a space surrounding the semiconductor chip. The first and the second support structures are disposed along a side of the substrate. The first support structure is laterally separated from the side of the substrate by a first lateral distance. The side edge of the thermal conductive structure is laterally separated from the side of the substrate by a second lateral distance different than the first lateral distance.


Find Patent Forward Citations

Loading…