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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12300539 B1

PDFFull Text
Date of Patent:
May. 13, 2025

Filed:

Jul. 28, 2023

Source/drain contact formation methods and devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Cheng-Wei Chang, Hsinchu, TW;

Yu-Ming Huang, Tainan, TW;

Ethan Tseng, Hsinchu, TW;

Ken-Yu Chang, Hsinchu, TW;

Yi-Ying Liu, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Britt D Hanley

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 62/40 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76856 (2013.01); H01L 21/02068 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 62/151 (2025.01); H10D 62/405 (2025.01); H10D 62/832 (2025.01); H10D 64/62 (2025.01);
Abstract

A semiconductor device includes a substrate, two semiconductor fins protruding from the substrate, an epitaxial feature over the two semiconductor fins and connected to the two semiconductor fins, a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer includes a metal nitride. Along a boundary between the barrier layer and the metal layer, an atomic ratio of oxygen to metal nitride is about 0.15 to about 1.0.

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