Hsinchu, Taiwan

Ethan Tseng

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2022-2025.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2022-2025

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3 patents (USPTO):Explore Patents

Title: The Innovations of Ethan Tseng

Introduction

Ethan Tseng is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced methods and devices that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Ethan's latest patents include innovative source/drain contact formation methods and devices. One of his notable inventions describes a semiconductor device that comprises a substrate, two semiconductor fins protruding from the substrate, and an epitaxial feature that connects the two fins. This device also features a silicide layer over the epitaxial feature, a barrier layer over the silicide layer, and a metal layer over the barrier layer. The barrier layer is composed of a metal nitride, and the atomic ratio of oxygen to metal nitride along the boundary between the barrier layer and the metal layer is approximately 0.15 to about 1.0.

Career Highlights

Ethan Tseng is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approach have positioned him as a valuable asset to the company.

Collaborations

Ethan has collaborated with notable colleagues, including Cheng-Wei Chang and Yu-Ming Huang. Their teamwork has contributed to the advancement of semiconductor technologies and the successful development of new inventions.

Conclusion

Ethan Tseng's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to pave the way for future innovations in this critical field.

Profile summary based on public USPTO records.
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