The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2025
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Meng-Han Chou, Hsinchu, TW;
Kuan-Yu Yeh, Taoyuan, TW;
Wei-Yip Loh, Hsinchu, TW;
Hung-Hsu Chen, Tainan, TW;
Su-Hao Liu, Chiayi County, TW;
Liang-Yin Chen, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
The present disclosure provides a method to enlarge the process window for forming a source/drain contact. The method may include receiving a workpiece that includes a source/drain feature exposed in a source/drain opening defined between two gate structures, conformally depositing a dielectric layer over sidewalls of the source/drain opening and a top surface of the source/drain feature, anisotropically etching the dielectric layer to expose the source/drain feature, performing an implantation process to the dielectric layer, and after the performing of the implantation process, performing a pre-clean process to the workpiece. The implantation process includes a non-zero tilt angle.