The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Jul. 31, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yung-Chi Chu, Kaohsiung, TW;
Hung-Jui Kuo, Hsinchu, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Wei-Chih Chen, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2005.12); H01L 21/56 (2005.12); H01L 21/768 (2005.12); H01L 23/00 (2005.12); H01L 23/31 (2005.12); H01L 23/522 (2005.12); H01L 23/538 (2005.12); H01L 25/065 (2022.12);
U.S. Cl.
CPC ...
H01L 23/5283 (2012.12); H01L 21/563 (2012.12); H01L 21/76873 (2012.12); H01L 23/3128 (2012.12); H01L 23/5226 (2012.12); H01L 23/5383 (2012.12); H01L 23/5386 (2012.12); H01L 24/09 (2012.12); H01L 24/14 (2012.12); H01L 24/33 (2012.12); H01L 24/73 (2012.12); H01L 25/0655 (2012.12); H01L 2224/0231 (2012.12); H01L 2224/02373 (2012.12); H01L 2224/02379 (2012.12); H01L 2224/02381 (2012.12); H01L 2224/0401 (2012.12); H01L 2224/73203 (2012.12);
Abstract
A package structure includes a semiconductor die and a first redistribution circuit structure. The first redistribution circuit structure is disposed on and electrically connected to the semiconductor die, and includes a first build-up layer. The first build-up layer includes a first metallization layer and a first dielectric layer laterally wrapping the first metallization layer, wherein at least a portion of the first metallization layer is protruded out of the first dielectric layer.