The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Oct. 27, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Satoshi Toda, Nirasaki, JP;
Naoki Shindo, Nirasaki, JP;
Mitsuhiro Tachibana, Nirasaki, JP;
Haruna Suzuki, Nirasaki, JP;
Gen You, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2005.12); C23F 1/00 (2005.12); C23F 1/02 (2005.12); C23F 1/12 (2005.12); C23F 1/44 (2005.12); H01L 21/306 (2005.12); H01L 21/67 (2005.12);
U.S. Cl.
CPC ...
H01L 21/32135 (2012.12); C23F 1/00 (2012.12); C23F 1/02 (2012.12); C23F 1/12 (2012.12); C23F 1/44 (2012.12); H01L 21/30604 (2012.12); H01L 21/67069 (2012.12);
Abstract
An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.