The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2025

Filed:

Oct. 26, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chang-Pin Huang, Taoyuan, TW;

Tung-Liang Shao, Hsinchu, TW;

Hsien-Ming Tu, Hsinchu County, TW;

Ching-Jung Yang, Taoyuan, TW;

Yu-Chia Lai, Miaoli County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2005.12); H01L 23/00 (2005.12); H01L 23/52 (2005.12); H01L 29/40 (2005.12); H01L 21/56 (2005.12); H01L 23/31 (2005.12);
U.S. Cl.
CPC ...
H01L 24/05 (2012.12); H01L 24/04 (2012.12); H01L 24/11 (2012.12); H01L 24/13 (2012.12); H01L 24/73 (2012.12); H01L 21/563 (2012.12); H01L 23/3114 (2012.12); H01L 23/3157 (2012.12); H01L 24/03 (2012.12); H01L 24/06 (2012.12); H01L 2224/0345 (2012.12); H01L 2224/03452 (2012.12); H01L 2224/0346 (2012.12); H01L 2224/0348 (2012.12); H01L 2224/0401 (2012.12); H01L 2224/05008 (2012.12); H01L 2224/05009 (2012.12); H01L 2224/05022 (2012.12); H01L 2224/05111 (2012.12); H01L 2224/05124 (2012.12); H01L 2224/05139 (2012.12); H01L 2224/05144 (2012.12); H01L 2224/05147 (2012.12); H01L 2224/05555 (2012.12); H01L 2224/05559 (2012.12); H01L 2224/05569 (2012.12); H01L 2224/05572 (2012.12); H01L 2224/05573 (2012.12); H01L 2224/0558 (2012.12); H01L 2224/05611 (2012.12); H01L 2224/05616 (2012.12); H01L 2224/05624 (2012.12); H01L 2224/05639 (2012.12); H01L 2224/05644 (2012.12); H01L 2224/05647 (2012.12); H01L 2224/05655 (2012.12); H01L 2224/06051 (2012.12); H01L 2224/0615 (2012.12); H01L 2224/06154 (2012.12); H01L 2224/10126 (2012.12); H01L 2224/11334 (2012.12); H01L 2224/1134 (2012.12); H01L 2224/1191 (2012.12); H01L 2224/13021 (2012.12); H01L 2224/13022 (2012.12); H01L 2224/131 (2012.12); H01L 2224/13111 (2012.12); H01L 2224/13113 (2012.12); H01L 2224/13118 (2012.12); H01L 2224/13139 (2012.12); H01L 2224/13144 (2012.12); H01L 2224/13147 (2012.12); H01L 2224/73203 (2012.12); H01L 2924/01322 (2012.12); H01L 2924/12042 (2012.12); H01L 2924/3512 (2012.12);
Abstract

The present disclosure provides a method of processing a semiconductor structure. The method includes: placing a first semiconductor structure inside a semiconductor processing apparatus; supplying a solution, wherein the solution is directed toward a surface of the first semiconductor structure, and the solution includes a solvent and a resist; rotating the first semiconductor structure to spread the solution over the surface of the first semiconductor structure; forming a resist layer on the surface of the first semiconductor structure using the resist in the solution; and removing a portion of the solvent from the solution by an exhaust fan disposed adjacent to a periphery of the first semiconductor structure.


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