The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Aug. 09, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Sih-Hao Liao, New Taipei, TW;
Yu-Hsiang Hu, Hsinchu, TW;
Hung-Jui Kuo, Hsinchu, TW;
Chen-Hua Yu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/031 (2006.01); C08G 73/10 (2006.01); G03F 7/038 (2006.01); G03F 7/039 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/18 (2023.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
G03F 7/031 (2013.01); C08G 73/1067 (2013.01); C08G 73/1071 (2013.01); G03F 7/0387 (2013.01); G03F 7/039 (2013.01); H01L 21/481 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 23/49822 (2013.01); H01L 23/49894 (2013.01); H01L 23/5389 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/18 (2013.01); H01L 21/561 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/82101 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes applying a polymer mixture over a substrate, exposing and developing at least a portion of the polymer mixture to form a developed dielectric, and curing the developed dielectric to form a dielectric layer. The polymer mixture includes a polymer precursor, a photosensitizer, and a solvent. The polymer precursor may be a polyamic acid ester.