The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2025
Filed:
Apr. 25, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ya-Wen Yeh, Taipei, TW;
Yu-Tien Shen, Tainan, TW;
Shih-Chun Huang, Hsinchu, TW;
Po-Chin Chang, Taichung, TW;
Wei-Liang Lin, Hsinchu, TW;
Yung-Sung Yen, New Taipei, TW;
Wei-Hao Wu, Hsinchu, TW;
Li-Te Lin, Hsinchu, TW;
Pinyen Lin, Rochester, NY (US);
Ru-Gun Liu, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.