The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2025

Filed:

Jan. 25, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Carl Naylor, Portland, OR (US);

Ashish Agrawal, Hillsboro, OR (US);

Kevin Lin, Beaverton, OR (US);

Abhishek Anil Sharma, Portland, OR (US);

Mauro Kobrinsky, Portland, OR (US);

Christopher Jezewski, Portland, OR (US);

Urusa Alaan, Hillsboro, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 21/76843 (2013.01); H01L 21/76867 (2013.01); H01L 23/5226 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 21/28568 (2013.01);
Abstract

An aspect of the disclosure relates to an integrated circuit. The integrated circuit includes a first electrically conductive structure, a thin film crystal layer located on the first electrically conductive structure, and a second electrically conductive structure including metal e.g. copper. The second electrically conductive structure is located on the thin film crystal layer. The first electrically conductive structure is electrically connected to the second electrically conductive structure through the thin film crystal layer. The thin film crystal layer may be provided as a copper diffusion barrier.


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