The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Mar. 21, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Byung Seok Kwon, San Jose, CA (US);
Prashant Kumar Kulshreshtha, San Jose, CA (US);
Kwangduk Douglas Lee, Redwood City, CA (US);
Bushra Afzal, Saratoga, CA (US);
Sungwon Ha, Palo Alto, CA (US);
Vinay K. Prabhakar, Cupertino, CA (US);
Viren Kalsekar, Sunnyvale, CA (US);
Satya Teja Babu Thokachichu, San Jose, CA (US);
Edward P. Hammond, IV, Hillsborough, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
In one or more embodiments, a method for depositing a carbon hard-mask material by plasma-enhanced chemical vapor deposition (PECVD) includes heating a substrate contained within a process chamber to a temperature in a range from about 100 C to about 700 C and producing a plasma with a power generator emitting an RF power of greater than 3 kW. In some examples, the temperature is in a range from about 300 C to about 700 C and the RF power is greater than 3 kW to about 7 kW. The method also includes flowing a hydrocarbon precursor into the plasma within the process chamber and forming a carbon hard-mask layer on the substrate at a rate of greater than 5,000/min, such as up to about 10,000/min or faster.