The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Sep. 08, 2021
Kla Corporation, Milpitas, CA (US);
Liran Yerushalmi, Zicron Yaacob, IL;
Daria Negri, Haifa, IL;
Ohad Bachar, Timrat, IL;
Yossi Simon, Qiryat Atta, IL;
Amnon Manassen, Haifa, IL;
Nir Ben David, Hod Hasharon, IL;
Yoram Uziel, Yodfat, IL;
Etay Lavert, Givat Ella, IL;
KLA Corporation, Milpitas, CA (US);
Abstract
A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.