The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 29, 2024

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun-Wei Hsu, Hsinchu, TW;

Chih-Chieh Chang, Hsinchu County, TW;

Yi-Sheng Lin, Taichung, TW;

Jian-Ci Lin, Hsinchu, TW;

Jeng-Chi Lin, Hsinchu, TW;

Ting-Hsun Chang, Kaohsiung, TW;

Liang-Guang Chen, Hsinchu, TW;

Ji Cui, Bolingbrook, IL (US);

Kei-Wei Chen, Tainan, TW;

Chi-Jen Liu, Taipei, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); C09G 1/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7684 (2013.01); C09G 1/02 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01);
Abstract

A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.


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