The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Mar. 29, 2024
Agc Inc., Tokyo, JP;
Daijiro Akagi, Tokyo, JP;
Takuma Kato, Tokyo, JP;
Keishi Tsukiyama, Tokyo, JP;
Toshiyuki Uno, Fukushima, JP;
Hiroshi Hanekawa, Tokyo, JP;
Ryusuke Oishi, Fukushima, JP;
Sadatatsu Ikeda, Fukushima, JP;
Yukihiro Iwata, Fukushima, JP;
Chikako Hanzawa, Fukushima, JP;
AGC Inc., Tokyo, JP;
Abstract
A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.