The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Jun. 25, 2020
Lam Research Corporation, Fremont, CA (US);
Samantha Siamhwa Tan, Newark, CA (US);
Jengyi Yu, San Ramon, CA (US);
Da Li, Newark, CA (US);
Yiwen Fan, Fremont, CA (US);
Yang Pan, Los Altos, CA (US);
Jeffrey Marks, Saratoga, CA (US);
Richard A. Gottscho, Menlo Park, CA (US);
Daniel Peter, Sunnyvale, CA (US);
Timothy William Weidman, Sunnyvale, CA (US);
Boris Volosskiy, San Jose, CA (US);
Wenbing Yang, Campbell, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.