The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Dec. 18, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shu-Shen Yeh, Taoyuan, TW;
Che-Chia Yang, Taipei, TW;
Chia-Kuei Hsu, Hsinchu, TW;
Po-Yao Lin, Zhudong Township, TW;
Shin-Puu Jeng, Hsinchu, TW;
Chia-Hsiang Lin, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes forming a first dielectric layer, forming a first redistribution line including a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric layer covering the first redistribution line, and patterning the second dielectric layer to form a via opening. The first redistribution line is revealed through the via opening. The method further includes depositing a conductive material into the via opening to form a second via in the second dielectric layer, and a conductive pad over and contacting the second via, and forming a conductive bump over the conductive pad. The conductive pad is larger than the conductive bump, and the second via is offset from a center line of the conductive bump.