The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Cheng-Chin Lee, Hsinchu, TW;
Shao-Kuan Lee, Hsinchu, TW;
Hsin-Yen Huang, Hsinchu, TW;
Hsiao-Kang Chang, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate with a conductive structure thereon, a first dielectric layer, a conductive feature and a second dielectric layer. The substrate includes a conductive feature. The conductive feature is formed in the first dielectric layer, is electrically connected to the conductive feature. The second dielectric layer is formed on the first dielectric layer and is disposed adjacent to the conductive feature. The first dielectric layer and the second dielectric layer are made of different materials.