The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Mar. 12, 2020
Applicants:

Nippon Micrometal Corporation, Saitama, JP;

Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;

Inventors:

Takashi Yamada, Saitama, JP;

Akihito Nishibayashi, Saitama, JP;

Teruo Haibara, Saitama, JP;

Daizo Oda, Saitama, JP;

Motoki Eto, Saitama, JP;

Tetsuya Oyamada, Tokyo, JP;

Takayuki Kobayashi, Tokyo, JP;

Tomohiro Uno, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 20/00 (2006.01); B23K 35/00 (2006.01); B23K 35/02 (2006.01); B23K 35/28 (2006.01); C22F 1/04 (2006.01); H01L 23/00 (2006.01); B23K 101/40 (2006.01);
U.S. Cl.
CPC ...
B23K 35/0227 (2013.01); B23K 20/004 (2013.01); B23K 20/005 (2013.01); B23K 20/007 (2013.01); B23K 35/286 (2013.01); C22F 1/04 (2013.01); H01L 24/43 (2013.01); H01L 24/45 (2013.01); B23K 2101/40 (2018.08); H01L 24/05 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/43986 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45124 (2013.01);
Abstract

There is provided an Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the Al bonding wire is operated. The bonding wire is composed of Al or Al alloy, and is characterized in that an average crystal grain size in a cross-section of a core wire in a direction perpendicular to a wire axis of the bonding wire is 0.01 to 50 μm, and when measuring crystal orientations on the cross-section of the core wire in the direction perpendicular to the wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction.


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