The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Sep. 10, 2019
Lam Research Corporation, Fremont, CA (US);
Hui-Jung Wu, Pleasanton, CA (US);
Bart J. van Schravendijk, Palo Alto, CA (US);
Mark Naoshi Kawaguchi, San Carlos, CA (US);
Gereng Gunawan, Saratoga, CA (US);
Jay E. Uglow, Livermore, CA (US);
Nagraj Shankar, Tualatin, OR (US);
Gowri Channa Kamarthy, Pleasanton, CA (US);
Kevin M. McLaughlin, Sherwood, OR (US);
Ananda K. Banerji, West Linn, OR (US);
Jialing Yang, Sherwood, OR (US);
John Hoang, Fremont, CA (US);
Aaron Lynn Routzahn, Fremont, CA (US);
Nathan Musselwhite, San Jose, CA (US);
Meihua Shen, Fremont, CA (US);
Thorsten Bernd Lill, Kalaheo, HI (US);
Hao Chi, San Mateo, CA (US);
Nicholas Dominic Altieri, San Mateo, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.