The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 2024
Filed:
Jun. 21, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hung-Chang Sun, Kaohsiung, TW;
Po-Chin Chang, Taichung, TW;
Akira Mineji, Hsinchu County, TW;
Zi-Wei Fang, Hsinchu County, TW;
Pinyen Lin, Rochester, NY (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes forming a gate structure on a substrate; depositing a first dielectric layer over the gate structure; depositing a second dielectric layer over the first dielectric layer and having a different density than the first dielectric layer; performing a first etching process on the first and second dielectric layers to form a trench; performing a second etching process on the first and second dielectric layers to modify the trench; filling a conductive material in the modified trench.