logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12033972 B1

PDFFull Text
Date of Patent:
Jul. 09, 2024

Filed:

Nov. 06, 2020

Chip package, method of forming a chip package and method of forming an electrical contact

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Joachim Mahler, Regensburg, DE;

Michael Bauer, Nittendorf, DE;

Jochen Dangelmaier, Beratzhausen, DE;

Reimund Engl, Munich, DE;

Johann Gatterbauer, Parsberg, DE;

Frank Hille, Munich, DE;

Michael Huettinger, Munich, DE;

Werner Kanert, Holzkirchen, DE;

Heinrich Koerner, Bruckmuehl, DE;

Brigitte Ruehle, Holzkirchen, DE;

Francisco Javier Santos Rodriguez, Villach, AT;

Antonio Vellei, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

VIERING, JENTSCHURA & PARTNER MBB

Primary Examiner:

Benjamin P Sandvik

Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/02 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 24/48 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02288 (2013.01); H01L 23/293 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 23/4952 (2013.01); H01L 23/49582 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/83 (2013.01); H01L 24/85 (2013.01); H01L 21/02266 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 23/3107 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/03827 (2013.01); H01L 2224/03831 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05681 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45572 (2013.01); H01L 2224/45573 (2013.01); H01L 2224/45611 (2013.01); H01L 2224/45618 (2013.01); H01L 2224/45639 (2013.01); H01L 2224/45644 (2013.01); H01L 2224/45649 (2013.01); H01L 2224/45655 (2013.01); H01L 2224/45657 (2013.01); H01L 2224/45664 (2013.01); H01L 2224/45666 (2013.01); H01L 2224/4567 (2013.01); H01L 2224/45671 (2013.01); H01L 2224/45672 (2013.01); H01L 2224/4568 (2013.01); H01L 2224/45686 (2013.01); H01L 2224/4569 (2013.01); H01L 2224/45693 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/4813 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85375 (2013.01); H01L 2224/85801 (2013.01); H01L 2224/8592 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/181 (2013.01);
Abstract

A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

Find Patent Forward Citations

Loading…