The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 25, 2024

Filed:

Mar. 13, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Munehito Kagaya, Yamanashi, JP;

Satoru Kawakami, Yamanashi, JP;

Tsuyoshi Moriya, Tokyo, JP;

Tatsuo Matsudo, Yamanashi, JP;

Jun Yamawaku, Yamanashi, JP;

Hiroyuki Onoda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32174 (2013.01); H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01);
Abstract

There is provided a plasma processing device. The plasma processing device comprises: a processing chamber; a partition plate that has an insulating property, and configured to partition a space in the processing chamber into a reaction chamber in which an object to be processed is mounted and a plasma generating chamber in which plasma is generated, wherein a first electrode is provided on a surface of the partition plate on the side of the plasma generating chamber, and the partition plate has a plurality of through holes formed for supplying active species contained in the plasma generated in the plasma generating chamber to the reaction chamber; a second electrode disposed in the plasma generating chamber so as to face the first electrode; and a power supply configured to supply high-frequency power obtained by phase-controlling and superimposing high-frequency powers of a plurality of frequencies to one of the first electrode and the second electrode when the plasma is generated in the plasma generating chamber.


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