The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2024
Filed:
May. 17, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Huan-Chieh Su, Tianzhong Township, TW;
Chih-Hao Wang, Baoshan Township, TW;
Kuo-Cheng Chiang, Zhubei, TW;
Wei-Hao Wu, Hsinchu, TW;
Zhi-Chang Lin, Zhubei, TW;
Jia-Ni Yu, New Taipei, TW;
Yu-Ming Lin, Hsinchu, TW;
Chung-Wei Hsu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/76829 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823864 (2013.01); H01L 27/0924 (2013.01); H01L 29/66795 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.