The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 30, 2024

Filed:

Dec. 13, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Ruopeng Deng, San Jose, CA (US);

Xiaolan Ba, Fremont, CA (US);

Tianhua Yu, Tracy, CA (US);

Yu Pan, San Jose, CA (US);

Juwen Gao, San Jose, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.


Find Patent Forward Citations

Loading…