The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 05, 2024

Filed:

Aug. 09, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Kai Cheng, Hsinchu County, TW;

Tsung-Shu Lin, New Taipei, TW;

Tsung-Yu Chen, Hsinchu, TW;

Hsien-Pin Hu, Zhubei, TW;

Wen-Hsin Wei, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/49 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 23/49816 (2013.01); H01L 23/5386 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/24225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01);
Abstract

A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.


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