The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Aug. 26, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Sudha S. Rathi, San Jose, CA (US);

Ganesh Balasubramanian, Fremont, CA (US);

Nagarajan Rajagopalan, San Jose, CA (US);

Abdul Aziz Khaja, San Jose, CA (US);

Prashanthi Para, Santa Clara, CA (US);

Hiral D. Tailor, Portland, OR (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/50 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/02115 (2013.01); H01J 2237/332 (2013.01);
Abstract

Exemplary methods of semiconductor processing may include forming a plasma of a carbon-containing precursor in a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a substrate housed in the processing region of the semiconductor processing chamber. The methods may include halting a flow of the carbon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include contacting the carbon-containing material with plasma effluents of an oxidizing material. The methods may include forming volatile materials from a surface of the carbon-containing material.


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