The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2023
Filed:
Jul. 29, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Fei Fan Duan, Hsinchu, TW;
Fong-yuan Chang, Hsinchu, TW;
Chi-Yu Lu, Hsinchu, TW;
Po-Hsiang Huang, Hsinchu, TW;
Chih-Liang Chen, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); G06F 30/398 (2020.01); G06F 119/12 (2020.01); H01L 23/532 (2006.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); G06F 30/398 (2020.01); H01L 23/5226 (2013.01); G03F 1/36 (2013.01); G06F 2119/12 (2020.01); H01L 23/53209 (2013.01);
Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern on a substrate, a second conductive pattern above the first conductive pattern, and a third conductive pattern above the first conductive pattern, all extending along a first direction. The first conductive pattern is electrically connected in parallel to the second conductive pattern and the third conductive pattern.