The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Jan. 04, 2019
Intel Corporation, Santa Clara, CA (US);
Willy Rachmady, Beaverton, OR (US);
Gilbert Dewey, Beaverton, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Aaron Lilak, Beaverton, OR (US);
Patrick Morrow, Portland, OR (US);
Anh Phan, Beaverton, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Ehren Mannebach, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Gate-all-around integrated circuit structures having depopulated channel structures, and methods of fabricating gate-all-around integrated circuit structures having depopulated channel structures using a bottom-up oxidation approach, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a substrate. The vertical arrangement of nanowires has one or more active nanowires above one or more oxidized nanowires. A gate stack is over the vertical arrangement of nanowires and around the one or more oxidized nanowires.