The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jan. 21, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Chun-Hsien Huang, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Hsien-Lung Yang, Taipei, TW;
Yu-Kai Chen, Taipei, TW;
Wei-Jung Lin, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 21/768 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/76805 (2013.01); H01L 21/76807 (2013.01); H01L 21/76843 (2013.01); H01L 21/76889 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 29/41791 (2013.01); H01L 29/665 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.