Hsien-Lung Yang

Title: Hsien-Lung Yang: Innovator in Semiconductor Technology

Introduction

Hsien-Lung Yang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work has been instrumental in advancing the efficiency and functionality of semiconductor devices.

Latest Patents

Among his latest patents is a method of forming contact metal for semiconductor devices. This invention describes a device that includes a source/drain feature formed over a substrate. A dielectric layer is formed over the source/drain feature, and a contact trench is created through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer is deposited in the contact trench, followed by a cobalt layer deposited over the TiN layer in the contact trench. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Hsien-Lung Yang has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and Wavetek Microelectronics Corporation. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technology.

Collaborations

Some of his coworkers include Chun-Hsien Huang and Hong-Mao Lee, who have collaborated with him on various projects throughout his career.

Conclusion

Hsien-Lung Yang's contributions to semiconductor technology through his patents and professional experience highlight his role as an influential inventor in the industry. His innovative methods continue to shape the future of semiconductor devices.