The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Sep. 07, 2021
Apparatus for generating extreme ultraviolet (euv), method of manufacturing the same, and euv system
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jihoon Na, Bucheon-si, KR;
Mun Ja Kim, Hwaseong-si, KR;
Jaewhan Sung, Suwon-si, KR;
Byungchul Yoo, Yongin-si, KR;
Jibeom Yoo, Hwaseong-si, KR;
Hakseok Lee, Hwaseong-si, KR;
Myeongjin Jeong, Hwaseong-si, KR;
Hyunjune Cho, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
RESEARCH BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY, Suwon-si, KR;
Abstract
An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.