The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Mar. 25, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Hao Liao, Taichung, TW;

Hsi-Wen Tien, Xinfeng Township, TW;

Chih-Wei Lu, Hsinchu, TW;

Yu-Teng Dai, New Taipei, TW;

Hsin-Chieh Yao, Hsinchu, TW;

Chung-Ju Lee, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor structure includes a gate structure over a substrate. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes a contact structure formed over the source/drain epitaxial structure. The structure also includes a first via structure formed over the contact structure. The structure also includes a metal line electrically connected to the first via structure. The structure also includes a spacer layer formed over the sidewall and over a portion of a top surface of the metal line. The structure also includes a second via structure formed over the metal line through the spacer layer.


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