The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Feb. 08, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tzu-Sung Huang, Tainan, TW;
Cheng-Chieh Hsieh, Tainan, TW;
Hsiu-Jen Lin, Hsinchu County, TW;
Hui-Jung Tsai, Hsinchu, TW;
Hung-Yi Kuo, Taipei, TW;
Hao-Yi Tsai, Hsinchu, TW;
Ming-Hung Tseng, Miaoli County, TW;
Yen-Liang Lin, Taichung, TW;
Chun-Ti Lu, Hsinchu, TW;
Chung-Ming Weng, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.