The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jan. 18, 2021
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Inventors:

Chandan Kr Barik, West Bengal, IN;

Michael Haverty, Mountain View, CA (US);

Muthukumar Kaliappan, Fremont, CA (US);

Cong Trinh, Santa Clara, CA (US);

Bhaskar Jyoti Bhuyan, San Jose, CA (US);

John Sudijono, Singapore, SG;

Anil Kumar Tummanapelli, Telangana, IN;

Richard Ming Wah Wong, Singapore, SG;

Yingqian Chen, Singapore, SG;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02211 (2013.01); C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01);
Abstract

Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SiN) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SiN) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).


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